properties temperature electrical thin temperatures

The gap

Supporting evidence — 8 representative gaps

• Impact of different rinsing temperatures on SnS thin films created using the SILAR technique (2024) · doi

  The study only examined three rinsing temperatures (60°C, 70°C, 80°C); a broader temperature range and more granular intervals could provide deeper insights into the temperature-property relationship.

  Keywords: temperature examined three rinsing temperatures broader range granular intervals provide deeper insights property relationship
• Formation and properties of GeSn:C films on silicon substrates (2024) · doi

  The paper focuses on characterization via Raman spectroscopy but does not explore other complementary characterization techniques (e.g., electrical properties, carrier mobility, photoluminescence) that would be relevant for IR optoelectronic applications mentioned in the funding project.

  Keywords: characterization focuses raman spectroscopy explore complementary techniques electrical properties carrier mobility photoluminescence relevant optoelectronic applications
• Improving functional properties in Cr2O3 thin films through annealing: a route toward sustainable materials engineering (2026) · doi

  The study focuses only on a single annealing temperature (450 °C) and RT comparison; a broader range of annealing temperatures and their systematic effects on functional properties was not explored.

  Keywords: annealing focuses single temperature comparison broader range temperatures systematic effects functional properties explored
• Determination of Heat Treatment Parameters of Gypsum Molds in the Al/CF Composite Manufacturing Process (2026) · doi

  The study focused on two discrete annealing temperatures (380°C and 730°C) with marginal differences in results, indicating need for investigation of additional temperature parameters and intermediate values.

  Keywords: focused discrete annealing temperatures marginal differences indicating need investigation additional temperature parameters intermediate values
• Synthesis of ZnO Thin Films Using Chemical Bath and Investigation of Physicochemical Properties (2023) · doi

  Low-temperature annealing effects on DC magnetron sputtered Zn(1-x)Sn(x)O thin films have been characterized (reference 37), but the comparable effects of annealing temperature on chemical bath deposited ZnO and Al-doped ZnO thin films regarding optical bandgap and electrical conductivity remain uncharacterized.

  Keywords: annealing temperature aluminum-doped ZnO optical bandgap electrical properties thin films
• Synthesis of ZnO Thin Films Using Chemical Bath and Investigation of Physicochemical Properties (2023) · doi

  Modified chemical bath deposition has been applied to Zn(O,S) thin film preparation (reference 23), but systematic investigation of dopant types (Al, In, F) and dopant concentrations on the physicochemical properties and band alignment of ZnO thin films synthesized by standard chemical bath deposition is lacking.

  Keywords: dopant concentration chemical bath deposition ZnO band alignment electrical properties optical properties
• Impact of different rinsing temperatures on SnS thin films created using the SILAR technique (2024) · doi

  No investigation of the electrical properties (conductivity, carrier concentration, mobility) of the SnS thin films was conducted despite their potential application as absorber layers.

  Keywords: investigation electrical properties conductivity carrier concentration mobility thin films conducted despite potential application absorber layers
• Formation and properties of GeSn:C films on silicon substrates (2024) · doi

  Limited investigation of the optimal carbon doping concentrations and their effects on film properties; only implantation of C+ ions is tested without systematic variation studies.

  Keywords: limited investigation optimal carbon doping concentrations effects film properties implantation ions tested without systematic variation