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Open research questions in 2D Materials and Applications

45 unresolved questions extracted from the limitations and future-work sections of 376 2D Materials and Applications papers in our library. Each links back to the study that raised it.

What the literature leaves open

  • By organizing diverse TMD-enabled biomedical functions within a common physical framework, this review highlights general design principles that link material properties to multifunctional performance while also revealing several important challenges that remain to be addressed.

    Versatile and remarkable potential of transition metal dichalcogenides for advanced phototherapy and biosensing · 2026 · DOI

  • The crystallographic alignment angle twist angle between TMDC and graphene layers is predicted to tune the balance of Ising and Rashba SOC, but a combined theoretical and experimental understanding of how twist angle governs the topological character of correlated states has not been systematically established.

    Orientation-tunable correlated Chern insulating states in chiral twisted double bilayer graphene proximitized by WSe2 · 2026

  • The integration of 2D materials into neuromorphic computing architectures marks a significant advancement in developing next-generation information technologies. By exploiting their unique atomic-scale thickness and exceptional electronic, optoelectronic, and quantum mechanical properties, materials such as TMDs, h-BN, BP, and emerging tellurene-based materials could potentially address the fundamental limitations of conventional von Neumann computing paradigms. These systems facilitate the realization of devices capable of closely mimicking neuronal and synaptic behaviour, demonstrating substantial promise for low-power, high-performance, real-time adaptive systems. One of the most remarkable strengths of 2D materials lies in their inherent versatility and tuneable properties. Specifically, TMD-based devices have demonstrated significant synaptic plasticity through mechanisms such as chalcogen vacancy migration and controlled phase transitions, enabling both volatile and non-volatile memory functionalities crucial for neuromorphic systems. Furthermore, h-BN’s role as an insulating and dielectric layer in multilayered device structures has enhanced synaptic response speed and energy https://doi.org/10.1007/s40820-026-02253-1 © The authors Nano-Micro Lett. (2026) 18:413 Page 49 of 61 413 efficiency, crucial for implementing scalable neuromorphic circuits. BP’s anisotropic electronic and optoelectronic properties enable sophisticated functionalities such as optical synapses, further extending the application spectrum of neuromorphic computing toward advanced vision systems and dynamic pattern recognition. Nevertheless, critical challenges persist that must be resolved before these laboratory achievements translate into viable products. Foremost among these is the reproducible large-scale synthesis of high-quality 2D materials. Although CVD and ALD processes have made considerable strides toward scalability and uniformity, further improvements in defect engineering and precise doping methods are necessary to consistently achieve atomic-scale uniformity and material quality. Ensuring defect-free interfaces, reliable doping techniques, and stable grain boundaries will be pivotal in moving from isolated device demonstrations to integrated large-scale arrays. Additionally, the device-to-device uniformity of 2D-material-based neuromorphic devices under operational conditions remain major concern. Device longevity and robustness in varying environmental and operational contexts—such as fluctuations in temperature, mechanical stress, and ambient exposure—require continued focus on materials engineering and protective encapsulation strategies. Furthermore, quantum mechanical phenomena intrinsic to many 2D materials add layers of complexity to device fabrication and integration.

    2D Materials Powering Neuromorphic Intelligence · 2026 · DOI

  • Dislocations in crystalline materials are widely exploited to tailor the thermal conductivity of semiconductors and thermoelectrics, yet a critical gap persists: direct measurement of local thermal resistance at individual buried dislocations, along with its spatial extent, remains elusive due to the limitations of conventional thermal probes.

    Nanoscale Thermal Imaging of Dislocation-Mediated Heat Transport · 2026

  • Despite notable progress in synthesizing TMDC monolayer nanoribbons, the production of TMDC heterostructure nanoribbons, which can integrate the best characteristics of the constituent monolayers, remains elusive.

    Synthesis of rhombohedral WS <sub>2</sub> /MoS <sub>2</sub> nanoribbons with enhanced nonlinear responses · 2026 · DOI

  • concerns layer density, thickness, exceptional electronic properties and strong analyte interactions, undergoes rapid oxidation when exposed to oxygen and moisture [20]. Similarly, some MXenes can experience surface oxidation during long-term operation, which may degrade sensor performance.

    Emerging Two-Dimensional Nanomaterials for Advanced Sensing Applications and Intelligent Systems Integration · 2026 · DOI

  • Cross-sectional STEM and EDS analysis show no discernible pinholes within inspected regions, but comprehensive statistical analysis across larger sample areas is needed to fully rule out defect-mediated growth pathways.

    Substrate-field-modulated remote-van der Waals hybrid epitaxy in transition metal dichalcogenide heterostructures · 2026 · DOI

  • Transfer-related polymer residues, oxidation, and water adsorption at the MoS2 bottom surface introduce additional CET differences that require mitigation strategies for improved device performance.

    The 2D materials roadmap · 2026 · DOI

  • Discrepancy between SS performance statistics and capacitor C-V measurements for EOT estimation in top-gated MoS2 MOSFETs needs resolution, with lowest SS (~100mV/dec) corresponding to Dit level of ~5x10^12/cm2-eV but capacitor C-V measurements giving higher CET estimates.

    The 2D materials roadmap · 2026 · DOI

  • The transfer process for 2D materials using PPC/PDMS stamps requires careful control to avoid bubbles and wrinkles; optimization of this process for high-yield, large-area fabrication is not thoroughly characterized.

    Multimodal ion-gated transistor based on 2D superionic conductor for in-memory computing in deep learning · 2026 · DOI

  • The mechanical exfoliation method for obtaining CdPS3-Li nanoflakes (50 μm × 60 μm) is not scalable for industrial production; a methodology for synthesizing or transferring larger, uniform CdPS3-Li films for practical device fabrication needs development.

    Multimodal ion-gated transistor based on 2D superionic conductor for in-memory computing in deep learning · 2026 · DOI

  • While light power consumption was calculated as 41.83 fJ per PSC, the realistic operating conditions requiring 5-10 W external equipment (signal generator, oscilloscope, semiconductor parameter analyzer) represent significant practical energy overhead not addressed for deployment scenarios.

    Multimodal ion-gated transistor based on 2D superionic conductor for in-memory computing in deep learning · 2026 · DOI

  • The device area tested was only 20 μm² with a 16×10 and 2×8 array configuration; scaling to larger cross-bar arrays and practical device sizes for real-world applications remains undemonstrated.

    Multimodal ion-gated transistor based on 2D superionic conductor for in-memory computing in deep learning · 2026 · DOI

  • Although this chemical phase engineering can be performed at ambient temperatures and pressures, the underlying mechanisms are poorly understood, and the use of n -BuLi raises notable safety concerns.

    Photoredox phase engineering of transition metal dichalcogenides · 2024 · DOI

  • However, current operations are limited to in-sensor computing capabilities for near-infrared technology, and high-performance MWIR detectors for multi-state switching functions are lacking.

    Non-volatile 2D MoS2/black phosphorus heterojunction photodiodes in the near- to mid-infrared region · 2024 · DOI

  • Abstract Following the discovery of graphene, van der Waals materials have become a major platform for quantum matter, yet strongly interacting phases beyond graphene remain elusive.

    Versatile electronic phases enabled by intertwined multiple frustrations in an antiferromagnetic two-dimensional semimetal · 2026 · DOI

  • Plasmonic nanostructures offer an effective route for enhancing light-matter interaction in atomically thin semiconductors, whose optical response is intrinsically limited by their sub-nanometer active thickness.

    Spacer-Mediated Gold Nanocube Arrays for Edge-Localized Excitonic Enhancement in Monolayer MoS2 · 2026

  • However, strategies that enable the low‐temperature growth of high‐quality films, and the exfoliation of freestanding membranes are still lacking, largely hindering integration in functional devices.

    Low Temperature Growth of High‐Quality Wurtzite Ferroelectric Through Quasi‐van der Waals Epitaxy · 2026 · DOI

  • However, the equally important scaling limit for metal contacts remains unknown because of the lack of technology to directly probe the carrier injection region in contact areas.

    Directly probing the carrier transfer length in 2D-material transistors · 2026 · DOI

  • However, a comprehensive understanding of their physical mechanisms and a validated device design for broadband self‐powered detection, ultralow‐noise output, and integrated optical processing are still lacking.

    Edge‐State–Driven Vertical MoS <sub>2</sub> /Si Heterojunctions for Self‐Powered Broadband Photodetection and Physical‐Layer Intelligence · 2026 · DOI

  • Nevertheless, this approach is insufficient for photocatalysis, as parallel polarization causes bandgap closure while antiparallel polarization yields only marginal bandgap reduction.

    Tuning the Electronic Structure and Photocatalytic Properties in Polar Two‐Dimensional Gallium Oxide Through Interlayer Stacking and Sulfur Doping · 2026 · DOI

  • However, the carrier transport mechanisms across these lateral heterointerfaces, especially in heterostructures with nanometer-scale dimensions, remain underexplored.

    Nanoscale Control of Carrier Transport in Monolayer Transition-Metal Dichalcogenide Double Heterostructures · 2026 · DOI

  • While phase transitions in monolayer TMDs and semiconductor-to-metal conversions have been widely studied, structural transitions between semiconducting polytypes - particularly in bilayer (2L) systems - remain underexplored.

    Tungsten doping-induced phase transition in CVD-grown MoS2 bilayers · 2026 · DOI

  • However, reversible self-intercalation in atomically thin NiTe 2 has not been reported.

    Reversible self-intercalation in trilayer 1T-NiTe <sub>2</sub> · 2026 · DOI

  • The mechanism by which field penetration through the atomically continuous lattice modulates nucleation requires further theoretical investigation beyond the empirical observations presented.

    Substrate-field-modulated remote-van der Waals hybrid epitaxy in transition metal dichalcogenide heterostructures · 2026 · DOI

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45 open questions have been extracted from the limitations and future-work passages of 376 2D Materials and Applications papers in our library. Each one below links back to the study that raised it, so you can read the original claim in context.

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